Memory to enable the next generation of consumer mobility
Samsung has announced the latest in its range of high-density monolithic memory solutions, the industry’s first 90nm 512Mbit SDRAM for mobile applications. It is the first memory component to combine extreme bandwidth and high density while addressing the strict power and form factor requirements of power-sensitive devices.
Mobile SDR/DDR (Single Data Rate/Double Data Rate) memories are designed to consume less power than normal Synchronous DRAM by adopting a micro circuit architecture and low supply voltage of 1.8V, 2.5V or 3.0V. Additionally, Samsung’s devices support special functions such as PASR (Partial Array Self Refresh) and automatic TCSR (Temperature Compensated Self Refresh) which extend battery life both during operation and in standby mode.
A wide 32-bit interface cuts chip count in half while lower power extends play time. Programmable burst lengths and programmable latencies allow the same device to be used for a variety of high-bandwidth and high-performance memory system applications.
These devices will be particularly useful in emerging multi-function handsets. Such systems are incorporating increased multimedia capabilities as rapidly as vendors can deliver new products and carriers can offer new services. High-bandwidth, low-power, small form-factor memory is a key enabling technology for such devices. Samsung's new Mobile SDRAM memory devices open the way for handsets that seamlessly integrate multiple sophisticated functions in next-generation applications.
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