POWER AND LINEAR IC SOLUTIONS

MOSFETs Can Be Driven Direct from Logic

Three new MOSFETs from Zetex Semiconductors are designed for use in applications with limited drive capability, such as logic level shifting and buffering.

The ZXMN2B03E6 is supplied in an SOT236 package, whilst the ZXMN2B14FH and ZXMN2B01F are in SOT23 format. All three are 20V N-channel enhancement mode devices that are capable of low-loss switching at a VGS of 1.8V, enabling them to be operated from two 1.2V cells or a single Li-Ion cell. Their ultra low gate drive requirements also mean that they can be driven directly by logic gates.



RDS(ON) for the ZXMN2B03E6, ZXMN2B14FH and ZXMN2B01F is guaranteed to be less than 75mΩ, 100mΩ and 200mΩ respectively at 1.8VGS and 40mΩ, 55mΩ and 100mΩ at 4.5VGS. This makes them particularly suitable for low-voltage roles including level shifting for high-side disconnect switches, external switching for boost converter circuits and buffering low voltage microcontrollers and loads such as motors and solenoids.

The new devices are built using Zetex’s proprietary UMOS technology, which also confers fast switching performance. For example, the ZXMN2B01F rise and fall times are just 3.6ns and 10.5ns, for VGS=4.5V and ID=1A.

Features

• 20V N-channel enhancement mode MOSFETs
• Low gate drive voltage
• BVDSS of 20V
• 30µA knee current
• Continuous drain current up to 5.4A
• SOT23 or SOT236 Surface Mount packages

Applications

• Non isolated DC-DC converter circuits
• Motor drive functions
• Battery pack switches
• Disconnect switches

For further information, including FREE Product Samples and Datasheets on ZXMN2B03E6, ZXMN2B14FH and ZXMN2B01F, please click here.