| POWER AND LINEAR IC SOLUTIONS | |||
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| Small, low-profile packaging | |||
The Si548 series MOSFETs from Vishay Intertechnology are designed for use in load and battery switching, as well as switching applications in power amplifiers and chargers. Supplied in thermally enhanced PowerPAK ChipFET packages, N-channel and P-channel devices are available, with drain-source voltage ratings of 20V or 30V.  With a small footprint of just 1.8mm x 3mm and a thin 0.8mm profile, all of the devices are suitable for use in space-constrained environments. They are specified for use at continuous drain currents (ID) of up to 12A. Characterised for use in the extended -55°C to +150°C temperature range, they are built using Vishay’s proprietary TrenchFET technology. The Si5485DU is a 20V P-channel device. With a typical gate charge of just 14nC, the device offers low on-resistance (rDS) of 25mΩ at a gate-source voltage (VGS) of 4.5V. The Si5481DU provides similar specifications, but is designed for operation at low values of VGS, providing rDS of 41mΩ at VGS of 1.8V. This makes it suitable for use in portable and battery-powered equipment. The Si5482DU 30V N-channel device is also designed for portable applications, featuring a typical gate charge of 18nC and 17.5mΩ rDS at VGS of 4.5V. The Si5480DU is intended to suit DC/DC synchronous rectification applications. Two 20V N-channel devices, the Si5484DU and Si5486DU, are characterised for operation at VGS down to 2.5V and 1.8V respectively, to suit both portable and point-of-load power architectures. Features
Applications
For further information, including Datasheets for the Vishay Si5480-2 and Si5484-6, please click here |
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