POWER AND LINEAR IC SOLUTIONS

Transistors Improve RF System Sensitivity

With outstanding gain and noise characteristics, Infineon’s general purpose and high-end RF transistors have a 25-year history of serving wireless applications of all types. Fabricated in silicon or silicon-germanium process technologies, they can be used in a variety of Low-Noise Amplifiers (LNAs) and RF circuits well beyond 6GHz.

Application areas encompass all common wireless standards including ISM/RKE (Industrial, Scientific and Medical/Remote Keyless Entry); Tyre Pressure Monitoring Systems (TPMS); GPS; WLAN; WiMAX; cordless phones; Ultra-WideBand (UWB); and Satellite Digital Audio Radio System (SDARS).

Innovative devices such as the BFP460 and BFP540ESD integrate up to 1.5kV of ESD protection combined with unmatched RF performance, feature combinations believed to be unique on the market. For high-performance, the BFP600 SiGe series provides outstanding price/performance, with a high gain and extremely low noise figure of 0.65dB at 2GHz.



Infineon’s latest B7HF SiGe:C technology is used in the BFP700 series to cost-effectively provide the highest levels of RF performance. It provides extremely low noise figures for silicon-based discrete transistors of only 0.5dB at 2GHz (0.75dB at 6GHz) and high gain of up to 27.5dB at 2GHz (19dB at 6GHz). With the introduction of the new BFP700 series, Infineon has achieved silicon-based performance levels that could previously be attained only by using more expensive technologies based on GaAs.

The transistors are available in standard type SOT, flatlead TSFP and ultra miniature/flat leadless TSLP packages with a height of only 0.32mm.

RF-Bipolar Transistors Specification Table

P / N (Polarity NPN)	Maximum Ratings Ptot [mW]	Characteristics (TA=+25°C) typ. Values	Characteristics (TA=+25°C) typ. Values	Package
		fT [GHz]	**Gma/Gm [dB]
ESD hardened 1.5kV
NEW BFP460* ESD hardened 1.5kV	200	22	17.5	SOT343TSLP-3-1
NEW BFR460LR* ESD hardened 1.5kV	200	22	17.5	SOT343TSLP-3-1
SIEGET -25 RF-BIPOLAR-Transistors
BFP405 / BFP405F	55	25	22	SOT343TSFP-4
BFP420 / BFP420F	160	25	21	SOT343TSFP-4
BFP450	450	24	15.5	SOT343
SIEGET -45 RF-BIPOLAR-Transistors
BFP520 / BFP520F	100	45	23	SOT343TSFP-4
NEW BFP540ESD* ESD hardened 5kV	250	29	21	SOT343TSFP-4
NEW BFP540FESD* ESD hardened 1kV	250	29	21	SOT343TSFP-4
SiGe SIEGET- RF-BIPOLAR-Transistors
BFP620 / BFP620F	285	65	21.5	SOT343TSFP-4
BFP640 / BFP640F	200	36	24	SOT343TSFP-4
BFP650 / NEW BFP650F	500	36	21.5	SOT343TSFP-4
SiGe:C SIEGET- RF-BIPOLAR-Transistors
BFP740 / BFP740F	160	42	27.5	SOT343TSFP-4
NEW BFR705L3RH height 0.32mm	40	39	25	TSLP-3-9
NEW BFR740L3RH height 0.32mm	160	42	24.5	TSLP-3-9
NEW BFR750L3RH	360	37	18	TSLP-3-9

Features

• Best-in-class Si and SiGe:C RF bipolar technology
• Ultra low noise figure down to 0.5dB at 2GHz
• Very high gain up to 28dB at 2GHz
• SMD type SOT package for general-purpose applications
• Ultra small and flat three-pin TSLP Package for RF modules, height 0.32mm
• AEC Q101 automotive quality levels available
• RoHS compliant
• ESD hardened addition up to 1.5kV

Applications

• High frequency drivers and Low Noise Amplifiers (LNA) up to 12GHz
• 315MHz – 868MHz ultra-low power Automatic Meter Reading (AMR)
• 1.575GHz GPS/Galileo navigation systems and modules
• 2.1GHz – 2.4GHz UMTS and cordless phone
• 2.4GHz ISM
• 2.33GHz, 2.6GHz SDARS satellite radio and digital multimedia broadcasting
• 5GHz – 6GHz WLAN / WiFi
• 5.8GHz cordless phone, Dedicated Short Range Communications (DSRC)
• 3GHz – 10GHz UWB, WiMAX, satellite TV, Low Noise Blocks (LNBs)
• Oscillators and VCOs up to 6GHz

For further information, including copies of the BFP460 and BFP540ESD Datasheets, please click here