POWER AND LINEAR IC SOLUTIONS

New Power MOSFETs Improve DC/DC Converter Efficiency

The TPCA8012-H and TPCA8019-H UMOS V-H Series high-speed switching MOSFETs from Toshiba Electronics Europe provide high drain current (I_D), low on-state resistance (R_DSON) and high power efficiency.



The new n-channel devices extend the UMOS V-H Series with higher drain current of 40A and 45A (maximum) and lower R_DSON of 4.9mΩ and 3.1mΩ, respectively. The series is intended for use in synchronous DC/DC converters in power supplies.

The new devices join nine other members of the UMOS V-H Series to provide a variety of drain current, drain-source voltage, and a selection of other performance characteristics to meet various application requirements.

Compared to previous process technology from Toshiba, the UMOS V-H Series improves many of the key parameters required for better power efficiency of low-side MOSFETs in a synchronous DC-DC converter. In addition to lower R_DSON, these include reduced self-turn-on loss, achieved through lower gate-to-drain capacitance (C_gd), lower C_gd/C_gs ratio, lower gate resistance (R_g), and optimised gate threshold voltage. For the high-side MOSFET, Toshiba UMOS V-H technology enables fast switching, achieved through low gate switch charge (Q_SW) and gate resistance (R_g).

The TPCA8012-H and TPCA8019-H are offered in SOP Advance packages with a footprint of 5.0mm x 6.0mm, to help minimise board area and device temperature. These packages feature a 41% lower profile than a standard SOP-8 package, and enable approximately 47% higher power dissipation. Both devices feature a maximum drain-source voltage rating of 30V.

UMOS V is a fifth generation process technology in the Toshiba fast switching series. It uses a trench gate structure that combines low R_DSON with fast switching. Low gate resistance, a lower gate-to-drain capacitance (C_gd), and lower C_gd /C_gs ratio also help reduce the amount of self-turn on loss.

Features

• 30V high-speed n-channel MOSFETs
• High drain current: 40A and 45A options
• On-state resistance (R_DSON) as low as 3.1mΩ
• Reduced self-turn-on loss
• 5.0mm x 6.0mm SOP Advance package
  • 41% lower profile than a standard SOP-8
  • 47% higher power dissipation

Applications

• Synchronous DC/DC converters
• Power supplies

For further information, including a copy of the Toshiba Power MOSFET Catalogue, please click here