POWER AND LINEAR IC SOLUTIONS

New MOSFETs Make Smaller, More Efficient Lighting Supplies

A range of new power MOSFETs from STMicroelectronics offers increased ruggedness, improved switching performance and higher efficiency for applications such as lighting ballasts and Switch Mode Power Supplies (SMPS). Use of the company’s new SuperMESH3 fabrication technology reduces both conduction and switching losses.

The first SuperMESH3 devices introduced is the 620V STx6N62K3, which will be followed by the STx3N62K3, also at 620V, as well as the 525V STx7N52K3 and STx6N52K3. The new technology reduces on-resistance (RDS(on)) in DPAK packages to 1.28Ω in the STD6N62K3 at 620V and 0.98Ω in the STD7N52K3 at 525V, boosting operating efficiency in applications such as low-energy lamp ballasts.

The use of SuperMESH3 technology also reduces reverse recovery time (Trr), gate charge and intrinsic capacitance, leading to improved switching performance and enabling higher operating frequencies. The new devices therefore exhibit dv/dt behaviour that is amongst the best in the industry and a higher breakdown-voltage margin than previous generation devices.

These features translate into increased reliability and safety in lighting and other consumer electrical applications. The devices are particularly suitable for electronic lighting ballast designs, where they are used in the Power Factor Correction (PFC) and half-bridge sections, as well as in SMPSs for LCD televisions, where they are deployed mainly in the standby block. Other applications include battery chargers and High Intensity Discharge (HID) power supplies.



Combining STMicroelectronics' established strip-based PowerMESH™ layout with an optimised vertical structure, all SuperMESH3 devices are 100% avalanche tested and incorporate Zener protection to deliver robust performance.

Reduced on-resistance also translates into smaller package sizes and hence smaller solution footprint and board size. The STx6N62K3, STx7N52K3, STx3N62K3 and STx6N52K3 are therefore available in small packages, such as DPAK, while matching the switching and thermal performance of physically larger devices.

The STx6N62K3 is offered in IPAK, DPAK, TO-220 and TO-220FP packages. The STx3N62K3 at 2.5Ω will be offered in IPAK, DPAK, D2PAK, TO-220 and TO-220FP packages. The STx7N52K3 at 0.98Ω will be introduced in DPAK, D2PAK, TO-220 and TO-220FP packages. The STx6N52K3 at 1.2Ω will be available in DPAK and TO-220FP packages.

Features

• Compact, high efficiency, power MOSFETs
• 620V and 525V options
• RDS(on) as low as 0.98Ω in DPAK
  • 20% lower than previous technologies
• Range of package sizes: IPAK, DPAK, D2PAK, TO-220 and TO-220FPD2PAK
• Extremely high dv/dt for fast switching speeds
• Low capacitance and gate charge: losses up to 80% lower
• 100% avalanche tested
• Improved diode reverse recovery characteristics
• Gate-source Zener protection

Applications

• Lighting ballast
• HID
• Desktop power supplies
• Battery chargers
• SMPS for LCD TVs

For further information, including how to enter the Draw for one of ten SuperMESH3 Devices, or for STMicroelectronics STx3N62K3, STx6N52K3, STx6N62K3 or STx7N52K3 Datasheets, please click here