NXP Semiconductors introduces a range of 30V logic-level MOSFETs that deliver significant improvements in power efficiency.
Power-system design engineers continue to look to improve power conversion levels and heighten power densities so they can simplify thermal management and utilise smaller areas of board space.
Using an innovative proprietary power semiconductor technology, NXP’s Trench 6 series of logic-level MOSFET devices can enhance efficiency and simultaneously afford designers significant space savings.
With a compact 5mm x 6mm SO8 footprint and in LFPAK loss-free packages, Trench 6 MOSFETs deliver low thermal resistance, low inductance and high current capability. The typical on resistance figure (RDS(on)) is just 0.9mΩ.
These MOSFET products are optimised for use in DC/DC converters, Point-of-Load (POL) converters and Switch Mode Power Supplies (SMPS).
Features
Low RDS(on): 1.3mΩ (maximum) for PSMN1R3-30YL; 1.2mΩ (maximum) for PSMN1R2-25YL
Low thermal resistance: 1.1°K/W (typical)
Low package inductance: 1.1nH (typical)
Low profile package: 1.1mm height
Recommended for switching frequencies <1MHz
Avalanche rated
ROHS compliant and halogen-free
AEC-Q101 automotive compliant package
Applications
Motion control systems
Load switching
Voltage regulation
Li-ion battery protection
LED lighting control
For further information, including Datasheets and information on how to obtain 40V or 80V Samples, please click here.
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