POWER AND LINEAR IC SOLUTIONS

Power Semiconductor Solutions

The importance of finding adequate renewable resources to meet the world's ever increasing demand for energy cannot be underestimated. In response, Infineon Technologies has developed several new products that specifically address this sector.

The 1ED020I12-F(A) EiceDRIVER™ is a single channel IGBT driver that benefits from Infineon's proprietary core-less transformer technology, which combines the advantages of inductive signal transmission and isolation with compact IC-driver stage design.



This driver additionally provides galvanic isolation from the power switch. Transformer technology enables extremely short propagation delays. Compared to optocoupler solutions, no parameter degradation over time takes place, allowing the lowest pulse width distortion and the best dead-time control.

The device continues to operate stably in harsh electromagnetic environments, additionally providing a power-switch desaturation protection feature with fault feedback to the controller. It can drive 100A/1200V IGBTs with its integrated 2A output stage and is capable of driving down to -8V drive voltage. Its isolation characteristics are in accordance with IEC60747-5-2.

The 2ED020I12-FI EiceDRIVER is a half-bridge gate driver that offers a reliable and cost-effective solution for driving IGBT and MOSFET power stages up to 1200V breakdown voltage levels. This device is also based on the company's proprietary core-less transformer technology,

The driver is able to handle very high switching speeds (up to 200kHz) with +1A/-2A driving stage and full 1200V negative transient immunity. In addition, it features a rail-to-rail operational amplifier with a gain bandwidth of 20MHz and a separate comparator. This device is offered in a DSO-18 package.

The EiceDRIVER driver ICs are perfectly complemented by both the CoolMOS™ C6 and TRENCHSTOP™ IGBTs from Infineon

The CoolMOS C6 is a high-voltage power MOSFET family designed using the revolutionary Super Junction (SJ) principle. It can provide all the benefits of a fast switching MOSFET without sacrificing any ease of use.

The device achieves extremely low conduction and switching losses allowing more efficient, more compact, lighter and cooler switching applications.

Meanwhile, the 600V TRENCHSTOP and 1200V TRENCHSTOP 2 IGBTs are benchmark devices in green applications due to their high efficiency and reliability.

The IGBTs are designed for high efficiency applications with switching frequencies up to 40kHz. Plus, thanks to Infineon's patented thin wafer technology, they offer high radiation hardness in application.

Features

• 2ED020I12-FI - EiceDRIVER
  • 1200V half-bridge +1A/-2A gate driver
  • Immune to negative transient voltage
  • Floating channel for direct supply and bootstrap operation
  • Matched propagation delay for both channels
  • 3.3V and 5V TTL compatible inputs
  • Undervoltage lockout for both channels
  • Integrated comparator and op-amp
  • IEC 61000-4-4 compliant

• 1ED020I12-F(A) - EiceDRIVER
  • Galvanically insulated 1200V ±2A gate driver
  • EN-60747-5-2 (VDE0884 part 2), UL1577
  • V_ce(sat) detection for short-circuit power switch protection
  • Active Miller clamping
  • Negative gate drive down to -8V
  • 2A rail-to-rail output
  • Rated to +125°C
  • Automotive qualified

• CoolMOS C6
  • 600V breakdown voltage
  • All standard discrete packages, e.g. TO-220, TO-220 FullPAK and DPAK
  • Low on-state resistance
  • Low energy storage in output capacitance
  • Low reverse-recovery charge

• TRENCHSTOP
  • Extremely low V_ce(sat) and switching losses for high efficiency designs
  • T _j(max) of +175°C
  • High radiation hardness
  • Low EMI
  • Huge portfolio of current and voltage classes plus package types

Applications

• Switched mode power supplies
• Solar inverters
• Wind turbines
• Hybrid electric vehicles
• AC standalone drives
• Uninterruptible power supplies

For further information, including the CoolMOS C6 Power MOSFET and EiceDRIVER Product Briefs, please click here.