Low gate charge for HF switching industrial applications
International Rectifier’s new 150V and 200V HEXFET power MOSFET devices feature an ultra-low gate charge to maximise power conversion efficiency in high-frequency applications.
As DC/DC converter applications advance and switching frequencies increase, input capacitance and gate charge (Qg) play significant roles in overall power conversion efficiency levels. The ultra-low gate charge of the new MOSFETs from International Rectifier make them ideal for industrial applications including switched mode power supplies, UPS (Uninterruptible Power Supplies) and DC motor drives.
The 150V MOSFETs offer a total gate charge up to 59% lower than competing devices available on the market, while the 200V MOSFETs offer up to 33% improvement.
Both the 150V and 200V MOSFETs are optimised for fast switching circuits where switching losses are critical and are therefore well suited to use as a primary switch for isolated DC/DC converters in telecom applications or driving light-load efficiency system designs.
The MOSFETs are qualified to industrial grade and are fully compliant with Moisture Sensitivity Level 1 (MSL 1). The devices are available in lead-free TO220, D2PAK, TO262, DPAK and IPAK packages.
Specifications
Part Number
Package
Voltage (V)
Id (A)
RDS(on) max. (mΩ)
Qg (nC)
IRFB4615PBF
TO220
150
35
39
26
IRFS4615PBF
D2PAK
150
35
39
26
IRFSL4615PBF
TO262
150
35
39
26
IRFB4620PBF
TO220
200
25
72.5
25
IRFS4620PBF
D2PAK
200
25
72.5
25
IRFSL4620PBF
TO262
200
25
72.5
25
Features
Low gate charge (Qg)
26nC for 150V devices
25nC for 200V devices
Low on resistance (RDS(on))
39mΩ for 150V devices
75mΩ for 200V devices
Compact lead-free packages
MSL 1 compliant
Applications
Switch-mode power supplies
Uninterruptible power supplies
DC motor drives
For further information, including Datasheets for all part numbers listed in the table above, please click here.
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