Vishay Intertechnology has released four new Gen. 5.0 high-performance 45V and 100V Schottky diodes. The 6CWT04FN, 6CWT10FN, 10WT10FN, 20CWT10FN, and 20WT04FN extend the D-PAK current capability up to 20A. They are suitable as stand-alone packages for high-efficiency, high-density solutions, as well as offering a cost-effective and compact replacement for the D2PAK package.
Built on proprietary sub-micron trench technology, these devices offer maximum junction temperatures of +175°C, extremely low forward voltage drop and low reverse leakage, allowing designers to increase power density in automotive, solar energy and other high-temperature applications.
Their high and stable breakdown voltage accommodates voltage spikes and optimises power density, which is increased in the diodes by 25%. The devices feature 30% increased ruggedness for reverse avalanche capability, with parts 100% screened in avalanche, and negligible switching losses. All four devices are also available in I-PAK versions.
Features
+175°C maximum junction temperature
Low forward voltage drops at +125°C; 0.54V for 45V versions, 0.65V for 100V versions
Low reverse leakage at +125°C: 3.0mA for 45V versions, 4.0mA for 100V versions
AEC-Q101 qualified
High breakdown voltage: 57V for 45V versions, 118V for 100V versions
Applications
AC/DC secondary rectification
Photovoltaic systems
Switch mode power supplies
Audio systems
Portable electronics
Automotive drives
For further information, including the 45V and 100V Schottky Diodes Product Info and a range of Datasheets, please click here.
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